A monolithic W-band preamplified diode detector

Author

Wang, H. ; Lam, W. ; Ton, T.N. ; Lo, D.C.W. ; Tan, K.L. ; Dow, G.S. ; Allen, B. ; Berenz, J.

Author_Institution

TRW, Redondo Beach, CA, USA

fYear

1993

fDate

14-15 June 1993

Firstpage

167

Lastpage

170

Abstract

A monolithic W-band preamplified diode detector based on 0.1- mu m pseudomorphic AlGaAs-InGaAs-GaAs high-electron-mobility-transistor (HEMT) technology is discussed. This chip, consisting of a Schottky diode detector with a two-stage W-band low-noise amplifier (LNA), has a measured detector responsivity of 300 V/mW at 94 GHz and a tangential sensitivity of -62 dBm. This is the first reported monolithic preamplified diode detector at this frequency. A higher sensitivity preamplified detector which was built by cascading two monolithic three-stage W-band LNAs with the preamplified detector chip also shows a tangential sensitivity of -85 dBm. This monolithic chip is ideal for insertion into W-band radiometer and passive imaging array systems.<>

Keywords

III-V semiconductors; MMIC; Schottky-barrier diodes; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave detectors; microwave imaging; preamplifiers; radiometers; 0.1 micron; 94 GHz; AlGaAs-InGaAs-GaAs; EHF; MM-wave type; Schottky diode detector; W-band; high-electron-mobility-transistor; low-noise amplifier; monolithic chip; passive imaging array systems; preamplified diode detector; pseudomorphic HEMT technology; radiometer; two-stage LNA; Circuit synthesis; Envelope detectors; Fingers; Frequency estimation; Gallium arsenide; HEMTs; Impedance; Scattering parameters; Schottky diodes; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1993. Digest of Papers., IEEE 1993

Conference_Location

Atlanta, GA, USA

Print_ISBN

0-7803-1322-4

Type

conf

DOI

10.1109/MCS.1993.247452

Filename

247452