Title :
A monolithic W-band preamplified diode detector
Author :
Wang, H. ; Lam, W. ; Ton, T.N. ; Lo, D.C.W. ; Tan, K.L. ; Dow, G.S. ; Allen, B. ; Berenz, J.
Author_Institution :
TRW, Redondo Beach, CA, USA
Abstract :
A monolithic W-band preamplified diode detector based on 0.1- mu m pseudomorphic AlGaAs-InGaAs-GaAs high-electron-mobility-transistor (HEMT) technology is discussed. This chip, consisting of a Schottky diode detector with a two-stage W-band low-noise amplifier (LNA), has a measured detector responsivity of 300 V/mW at 94 GHz and a tangential sensitivity of -62 dBm. This is the first reported monolithic preamplified diode detector at this frequency. A higher sensitivity preamplified detector which was built by cascading two monolithic three-stage W-band LNAs with the preamplified detector chip also shows a tangential sensitivity of -85 dBm. This monolithic chip is ideal for insertion into W-band radiometer and passive imaging array systems.<>
Keywords :
III-V semiconductors; MMIC; Schottky-barrier diodes; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave detectors; microwave imaging; preamplifiers; radiometers; 0.1 micron; 94 GHz; AlGaAs-InGaAs-GaAs; EHF; MM-wave type; Schottky diode detector; W-band; high-electron-mobility-transistor; low-noise amplifier; monolithic chip; passive imaging array systems; preamplified diode detector; pseudomorphic HEMT technology; radiometer; two-stage LNA; Circuit synthesis; Envelope detectors; Fingers; Frequency estimation; Gallium arsenide; HEMTs; Impedance; Scattering parameters; Schottky diodes; Semiconductor device measurement;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1993. Digest of Papers., IEEE 1993
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1322-4
DOI :
10.1109/MCS.1993.247452
