Low-noise, low DC power linear amplifiers

Author

Ikalainen, P.K. ; Witkowski, L.C. ; Varian, K.R.

Author_Institution

Texas lnstrum. Inc., Dallas, TX, USA

fYear

1993

fDate

14-15 June 1993

Firstpage

159

Lastpage

162

Abstract

Low-noise, low-DC-power linear amplifiers using high-dynamic-range GaAs/int FETs are discussed. Noise figures as low as dB have been achieved in a Ku-band amplifier simultaneously with over 36-dBm OIP3 and 18-dB gain with only 655 mW of DC power. A wideband distributed amplifier has shown average midband 7-dB gain and noise figure together with 37-dBm OIP3 with 800 mW of DC power. Greatly improved second-order intercept points (OIP2) have been observed in the distributed amplifier as compared to typical ion-implanted MESFET amplifiers. A dual-gate version, of the distributed amplifier demonstrated significant dynamic range advantages over its ion-implanted FET counterpart. Overall, state-of-the-art results in terms of simultaneous linearity, noise figure, gain-bandwidth, and DC power consumption have been achieved.<>

Keywords

MMIC; field effect integrated circuits; microwave amplifiers; wideband amplifiers; 18 dB; 655 mW; 7 dB; 800 mW; DC power consumption; GaAs/int; Ku-band amplifier; LNA; dual-gate version; linear amplifiers; low DC power; wideband distributed amplifier; Broadband amplifiers; Distributed amplifiers; Dynamic range; Energy consumption; FETs; Gallium arsenide; Linearity; Low-noise amplifiers; MESFETs; Noise figure;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1993. Digest of Papers., IEEE 1993

Conference_Location

Atlanta, GA, USA

Print_ISBN

0-7803-1322-4

Type

conf

DOI

10.1109/MCS.1993.247454

Filename

247454