DocumentCode
3391496
Title
Numerical simulation of two-color infrared Hg1−x Cdx Te detectors for optimizing design
Author
Xu, Xiang Yan ; Ye, Zhen Hua ; Lu, Wei
Author_Institution
Chinese Acad. of Sci., Shanghai
fYear
2007
fDate
2-9 Sept. 2007
Firstpage
744
Lastpage
745
Abstract
The performance of two-color middle wavelength photovoltaic Hg1-xCdxTe detector is studied numerically for optimizing design. Simultaneous mode is designed for the two-color detector. The effect of SRH recombination electron lifetime in p-region on spectral response is examined, and the dependence of crosstalk on composition gradient of barrier layer is analyzed. Simulation results show that quantum efficiency decreases rapidly with decrease of SRH electron lifetime in p-region, at least about 10ns of SRH electron lifetime is required for better performance of the detector. Crosstalk decreases to the steady value determined by optical crosstalk as the composition gradient of barrier layer increases to about 0.03, so critical composition gradient of about 0.03 is necessary for suppressing the electrical crosstalk.
Keywords
carrier lifetime; infrared detectors; optical crosstalk; photodetectors; Hg1-xCdxTe; Hg1-xCdxTe detector; SRH recombination electron lifetime; barrier layer; composition gradient; design optimization; middle wavelength photovoltaic detector; optical crosstalk; quantum efficiency; spectral response; two-color infrared detectors; Crosstalk; Design optimization; Detectors; Electrons; Mercury (metals); Numerical simulation; Photovoltaic systems; Radiative recombination; Solar power generation; Tellurium; Hg1−x Cdx Te two-color detector; crosstalk; minority carrier lifetime; spectral response;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on Terahertz Electronics. IRMMW-THz. Joint 32nd International Conference on
Conference_Location
Cardiff
Print_ISBN
978-1-4244-1438-3
Type
conf
DOI
10.1109/ICIMW.2007.4516710
Filename
4516710
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