A highly compact, wideband GaAs HEMT X-Ku band image-reject receiver MMIC

Author

Katz, R. ; Aust, M.V. ; Kasody, R. ; Wang, H. ; Allen, B. ; Dow, G.S. ; Tan, K. ; Lin, S. ; Myers, R.

Author_Institution

TRW, Redondo Beach, CA, USA

fYear

1993

fDate

14-15 June 1993

Firstpage

131

Lastpage

134

Abstract

A fully integrated MMIC (monolithic microwave integrated circuit) receiver designed and fabricated using the 0.2- mu m pseudomorphic InGaAs-GaAs high-electron-mobility-transistor (HEMT) process technology is discussed. This MMIC receiver incorporates a single-stage RF amplifier, a two-staged balanced local oscillator (LO) amplifier, a single-stage IF amplifier, an IF switch and an image-reject diode mixer. Results from these receiver chips show good conversion gain and image rejection in a single small chip over multioctave frequencies. The chip operates from a single +5 V DC supply and draws 280 mA. Total chip size is 5.5 mm*4.5 mm.<>

Keywords

III-V semiconductors; MMIC; gallium arsenide; high electron mobility transistors; indium compounds; radar receivers; radio receivers; 0.2 micron; 280 mA; 5 V; IF switch; InGaAs-GaAs; Ku-band, compact design; X-band; balanced local oscillator; image-reject diode mixer; image-reject receiver MMIC; monolithic microwave integrated circuit; multioctave frequencies; pseudomorphic HEMT process technology; single +5 V DC supply; single-stage IF amplifier; single-stage RF amplifier; two-staged balanced LO amplifier; wideband; Gallium arsenide; HEMTs; Integrated circuit technology; MMICs; Microwave integrated circuits; Microwave technology; Monolithic integrated circuits; Radiofrequency amplifiers; Switches; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1993. Digest of Papers., IEEE 1993

Conference_Location

Atlanta, GA, USA

Print_ISBN

0-7803-1322-4

Type

conf

DOI

10.1109/MCS.1993.247460

Filename

247460