A highly integrated MMIC K-band transmit/receive chip

Author

Fudem, H. ; Moghe, S. ; Diets, G. ; Consolazio, S.

Author_Institution

Northrop Electronics Syst. Div., Rolling Meadows, IL, USA

fYear

1993

fDate

14-15 June 1993

Firstpage

119

Lastpage

122

Abstract

A highly integrated, wideband, monolithic-microwave-integrated-circuit (MMIC) transmit/receive (T/R) chip designed for both commercial and military FM CW applications is discussed. The MMIC circuit was designed using 0.25- mu m pseudomorphic high-electron-mobility-transistor (HEMT) technology. The T/R chip has three three-stage amplifiers, an active power divide, a diode double-balanced mixer and a voltage-controlled oscillator (VCO), all integrated on a single chip 96 mils*71 mils (2.4 mm *1.8 mm) in size.<>

Keywords

MMIC; field effect integrated circuits; frequency modulation; high electron mobility transistors; military equipment; radar equipment; radio equipment; 0.25 micron; FM CW applications; K-band; MMIC; VCO; active power divide; diode double-balanced mixer; high-electron-mobility-transistor; monolithic-microwave-integrated-circuit; pseudomorphic HEMT technology; three-stage amplifiers; transmit/receive chip; voltage-controlled oscillator; wideband; Broadband amplifiers; Diodes; HEMTs; Integrated circuit technology; K-band; MMICs; PHEMTs; Power amplifiers; Voltage-controlled oscillators; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1993. Digest of Papers., IEEE 1993

Conference_Location

Atlanta, GA, USA

Print_ISBN

0-7803-1322-4

Type

conf

DOI

10.1109/MCS.1993.247463

Filename

247463