Title :
Picosecond MODFET IC pulse sharpener
Author :
Shakouri, M.S. ; Black, A. ; Bloom, D.M. ; Perdomo, J. ; Kondoh, H. ; Vifian, H.
Author_Institution :
Hewlett-Packard Co., Santa Rosa, CA, USA
Abstract :
A monolithic synthetic transmission line pulse sharpener using a high power 0.25- mu m InGaAs-GaAs MODFET IC process is discussed. It current-sharpens a DC-to-5-GHz input to a pulse of at least 5-ps, 2-V output transition. This first implementation of a pulse-sharpening circuit in a MODFET IC process demonstrates the broadband capabilities of this technology for picosecond pulse-sharpening applications.<>
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; pulse shaping circuits; 0 to 5 GHz; 0.25 micron; 5 ps; InGaAs-GaAs; MODFET IC; broadband; monolithic synthetic transmission line; picosecond applications; pulse sharpener; Diodes; Distributed parameter circuits; FETs; HEMTs; Impedance; Inductors; MODFET circuits; MODFET integrated circuits; Power transmission lines; Pulse circuits;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1993. Digest of Papers., IEEE 1993
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1322-4
DOI :
10.1109/MCS.1993.247472
