Title :
Monolithic image rejection optoelectronic up-converters that employ the MMIC process
Author :
Kamitsuna, H. ; Ogawa, H.
Author_Institution :
ATR Opt. & Radio Commun. Res Lab., Kyoto, Japan
Abstract :
Very small 30-GHz-band monolithic image rejection optoelectronic up-converters that employ the high-electron-mobility-transistor (HEMT)-monolithic microwave-integrated circuit (MMIC) process are discussed. An in-phase divider and a branch-line hybrid with two HEMT optoelectronic mixers are successfully integrated in an MMIC chip area of 1.5 mm*1.1 mm. Fundamental performance results are reported, and excellent wideband performance, which comes from the well balanced operation of monolithic integrated circuits, is confirmed.<>
Keywords :
MMIC; field effect integrated circuits; frequency convertors; high electron mobility transistors; integrated optoelectronics; 30 GHz; HEMT optoelectronic mixers; MMIC process; branch-line hybrid; high-electron-mobility-transistor; image rejection; in-phase divider; monolithic microwave-integrated circuit; optoelectronic up-converters; wideband performance; Base stations; Frequency; HEMTs; MMICs; Millimeter wave technology; Optical fibers; Optical filters; Optical mixing; Optical receivers; Optical transmitters;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1993. Digest of Papers., IEEE 1993
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1322-4
DOI :
10.1109/MCS.1993.247473
