Title :
Miniaturized low noise variable MMIC amplifiers with low power consumption for L-band portable communication applications
Author :
Hara, S. ; Osato, K. ; Yamada, A. ; Tsukao, T. ; Yoshimasu, T.
Author_Institution :
Sharp Corp. Res. & Dev. Group, Nara, Japan
Abstract :
Miniaturized L-band low-noise variable gain amplifiers for portable mobile communication equipment applications are discussed. The fabricated monolithic microwave integrated circuits (MMICs) use D-mode GaAs MESFETs and need only positive bias. The amplifier has a noise figure of 3 dB and a gain of 14 dB. The chip size is approximately 1 mm*1 mm and the current dissipation is only 1.8 mA.<>
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; microwave amplifiers; mobile radio systems; radio equipment; 1.8 mA; 14 dB; 3 dB; D-mode; GaAs; L-band; LNA; MESFETs; low power consumption; low-noise variable gain amplifiers; mobile communication equipment; monolithic microwave integrated circuits; portable communication applications; positive bias; variable MMIC amplifiers; Energy consumption; Gain; Integrated circuit noise; L-band; Low-noise amplifiers; MESFET integrated circuits; MMICs; Microwave communication; Microwave devices; Mobile communication;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1993. Digest of Papers., IEEE 1993
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1322-4
DOI :
10.1109/MCS.1993.247475
