Title :
A broadband, planar, doubly balanced monolithic Ka-band diode mixer
Author :
Maas, S.A. ; Chang, K.W.
Author_Institution :
Nonlinear Consulting, Long Beach, CA, USA
Abstract :
A planar monolithic diode mixer that achieves 5-10-dB conversion loss and very low distortion and spurious responses over a 26-40-GHz RF and local oscillator (LO) bandwidth and DC-10-GHz IF is described. The diodes are the gate-to-channel junctions of 0.2- mu m*80- mu m InGaAs HEMTs, and the baluns are Marchand-like coplanar structures.<>
Keywords :
MMIC; mixers (circuits); 0 to 10 GHz; 14 GHz; 26 to 40 GHz; 5 to 10 dB; HEMTs; InGaAs; Ka-band; Marchand-like coplanar structures; baluns; broadband; conversion loss; doubly balanced; gate-to-channel junctions; planar monolithic diode mixer; wideband planar design; Bandwidth; Coupling circuits; Dielectric substrates; Diodes; Impedance matching; Inductance; RLC circuits; Radio frequency; Strips; Surface impedance;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1993. Digest of Papers., IEEE 1993
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1322-4
DOI :
10.1109/MCS.1993.247478
