Title :
A Ka-band HEMT MMIC 1 watt power amplifier
Author :
Aust, M.V. ; Allen, B. ; Dow, G.S. ; Kasody, R. ; Luong, G. ; Biedenbender, M. ; Tan, K.
Author_Institution :
TRW, Redondo Beach, CA, USA
Abstract :
A 34-36-GHz, 1-W, 9-dB-gain monolithic microwave integrated circuit (MMIC) power amplifier which utilizes 0.15- mu m pseudomorphic InGaAs-GaAs high-electron-mobility transistor (HEMT) process technology is discussed. Power amplifier sites across the wafer were fully characterized with an on-wafer pulsed large-signal S-parameter test set. Test results from these amplifier chips showed output powers >30 dBm, with >9-dB gain, and power-added efficiencies >20%. Overall chip size is 4.8 mm*2.3 mm. A two-stage power amplifier module using one chip to drive three chips has been developed. The resulting amplifier module has achieved 3-W output power and 17-dB gain from 34-36 GHz.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; power amplifiers; 0.15 micron; 1 W; 17 dB; 20 percent; 3 W; 34 to 36 GHz; 9 dB; HEMT MMIC; InGaAs-GaAs; Ka-band; high-electron-mobility transistor; large-signal S-parameter test; monolithic microwave integrated circuit; two-stage power module; Circuit testing; HEMTs; High power amplifiers; MMICs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; Power amplifiers; Power generation; Pulse amplifiers;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1993. Digest of Papers., IEEE 1993
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1322-4
DOI :
10.1109/MCS.1993.247480
