Title :
High-efficiency AlGaAs/GaAs HBT power amplifier MMIC for 1.9 GHz Japanese digital cordless phone
Author :
Hara, S. ; Sato, H. ; Twynam, J.K. ; Akagi, M. ; Nambu, N. ; Tanba, N. ; Yoshikawa, K. ; Kinosada, T. ; Yagura, M. ; Tsuji, H. ; Shinozaki, T. ; Yoshimasu, T. ; Miyajima, T. ; Tomita, T.
Author_Institution :
Sharp Corp. Res. & Dev. Group, Nara, Japan
Abstract :
A highly efficient personal hand phone (PHP) power amplifier monolithic microwave integrated circuit (MMIC) based on AlGaAs/GaAs heterojunction bipolar transistor (HBT) technology is discussed. The amplifier operates at a supply voltage of only 3 V, and yet a power-added efficiency as high as 40% is achieved at a 1-dB compression point of 24 dBm. This is the highest power-added efficiency ever reported for such an amplifier operating at any voltage. The amplifier also has high linearity.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; cordless telephone systems; digital radio systems; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; power amplifiers; ultra-high-frequency amplifiers; 1.9 GHz; 3 V; 40 percent; AlGaAs-GaAs; HBT power amplifier; Japanese digital cordless phone; MMIC; UHF; heterojunction bipolar transistor; monolithic microwave integrated circuit; personal hand phone; Bipolar integrated circuits; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Integrated circuit technology; MMICs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; Voltage;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1993. Digest of Papers., IEEE 1993
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-1322-4
DOI :
10.1109/MCS.1993.247486
