DocumentCode :
3392063
Title :
LV CMOS high speed analog multiplier
Author :
Hwang, Changku ; Hyogo, Akira ; Ismail, Mohammed ; Kim, Hong-Sun ; Moon, Gyu
Author_Institution :
Micrys Inc., Colombus, OH, USA
Volume :
2
fYear :
1997
fDate :
3-6 Aug. 1997
Firstpage :
1189
Abstract :
In this paper we propose a new low voltage high-speed CMOS composite transistor. This new transistor with a 3 dB bandwidth of 444 MHz; lowers supply voltage down to |Vt|+2Vds, sat and extends input voltage operating range to 1.8 V with a 3 V supply. These features together with the two high input impedance terminals provided by the composite transistor leads to the design of a high-speed four quadrant analog multiplier. All simulations have been carried out using MOSIS 2 μm N-well process with a 8 V supply. The results show that the multiplier can operate with a maximum differential input of 1 Vpp and ω-3 dB of 305 MHz.
Keywords :
CMOS analogue integrated circuits; analogue multipliers; 1.8 V; 2 micron; 3 V; 444 MHz; CMOS composite transistor; CMOS high speed multiplier; LV analog multiplier; MOSIS N-well process; differential input; four quadrant analog multiplier; high input impedance terminals; low voltage operation; Bandwidth; Circuits; Distortion; Impedance; Low voltage; MOS devices; MOSFETs; Signal design; Signal processing; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 1997. Proceedings of the 40th Midwest Symposium on
Print_ISBN :
0-7803-3694-1
Type :
conf
DOI :
10.1109/MWSCAS.1997.662292
Filename :
662292
Link To Document :
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