Title :
Single phase MOS-NDR mobile networks
Author :
Núnez, Juan ; Avedillo, María J. ; Quintana, José M.
Author_Institution :
Centro Nac. de Microelectron., Univ. de Sevilla, Sevilla, Spain
fDate :
May 30 2010-June 2 2010
Abstract :
Devices with an I-V characteristic exhibiting Negative Differential Resistance (NDR) are attractive from the circuit design point of view as it has been demonstrated by Resonant Tunneling Diodes (RTDs) circuits. Ideas coming from RTD-based designs can be exported to an “all CMOS” environment by using transistor circuits to generate the NDR characteristic (MOS-NDR). In this paper novel programmable MOS-NDRs are proposed and used to realize threshold logic gates on the basis of the MOnostable to BIstable Operating principle. It is shown that these gates can be connected to build up networks that are operated in a pipelined fashion using a single phase clock scheme.
Keywords :
clocks; logic gates; mobile communication; network synthesis; transistor circuits; I-V characteristic; MOnostable to BIstable Operating principle; RTD circuits; all CMOS environment; circuit design; logic gates; negative differential resistance; programmable MOS-NDR; resonant tunneling diodes; single phase MOS-NDR MOBILE networks; single phase clock scheme; transistor circuits; CMOS logic circuits; Character generation; Circuit synthesis; Clocks; Diodes; Logic circuits; Logic devices; Logic gates; RLC circuits; Resonant tunneling devices;
Conference_Titel :
Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
Conference_Location :
Paris
Print_ISBN :
978-1-4244-5308-5
Electronic_ISBN :
978-1-4244-5309-2
DOI :
10.1109/ISCAS.2010.5538038
