Single phase MOS-NDR mobile networks

Author

Núnez, Juan ; Avedillo, María J. ; Quintana, José M.

Author_Institution

Centro Nac. de Microelectron., Univ. de Sevilla, Sevilla, Spain

fYear

2010

fDate

May 30 2010-June 2 2010

Firstpage

153

Lastpage

156

Abstract

Devices with an I-V characteristic exhibiting Negative Differential Resistance (NDR) are attractive from the circuit design point of view as it has been demonstrated by Resonant Tunneling Diodes (RTDs) circuits. Ideas coming from RTD-based designs can be exported to an “all CMOS” environment by using transistor circuits to generate the NDR characteristic (MOS-NDR). In this paper novel programmable MOS-NDRs are proposed and used to realize threshold logic gates on the basis of the MOnostable to BIstable Operating principle. It is shown that these gates can be connected to build up networks that are operated in a pipelined fashion using a single phase clock scheme.

Keywords

clocks; logic gates; mobile communication; network synthesis; transistor circuits; I-V characteristic; MOnostable to BIstable Operating principle; RTD circuits; all CMOS environment; circuit design; logic gates; negative differential resistance; programmable MOS-NDR; resonant tunneling diodes; single phase MOS-NDR MOBILE networks; single phase clock scheme; transistor circuits; CMOS logic circuits; Character generation; Circuit synthesis; Clocks; Diodes; Logic circuits; Logic devices; Logic gates; RLC circuits; Resonant tunneling devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on

Conference_Location

Paris

Print_ISBN

978-1-4244-5308-5

Electronic_ISBN

978-1-4244-5309-2

Type

conf

DOI

10.1109/ISCAS.2010.5538038

Filename

5538038