Title :
A novel approach to monitoring of plasma processing equipment and plasma damage without test structures
Author :
Hoff, A. ; Nauka, K. ; Esry, T. ; Persson, E. ; Lagowski, J. ; Jastrzebski, L. ; Edelman, P.
Author_Institution :
Center for Microelectron. Res., Univ. of South Florida, Tampa, FL, USA
Abstract :
Routine monitoring of oxide charging in IC manufacture requires real-time evaluation of the results of plasma processes. Whole-wafer images of dielectric charging produced by plasma exposure and generated by a new diagnostic tool using reusable oxidized wafers, are shown to be effective tools in the correlation of plasma and equipment characteristics to charging
Keywords :
contact potential; integrated circuit technology; monitoring; sputter etching; surface charging; IC manufacture; contact potential difference; diagnostic tool; dielectric oxide charging; plasma damage; plasma processing equipment; real-time monitoring; whole-wafer imaging; Current measurement; Monitoring; Plasma applications; Plasma diagnostics; Plasma immersion ion implantation; Plasma materials processing; Plasma measurements; Plasma properties; Silicon; Testing;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 1997. IEEE/SEMI
Conference_Location :
Cambridge, MA
Print_ISBN :
0-7803-4050-7
DOI :
10.1109/ASMC.1997.630731
