Title :
SiGe BiCMOS technology for RF device and design applications
Author :
Ahlgren, D.C. ; King, N. ; Freeman, G. ; Groves, R. ; Subbanna, S.
Author_Institution :
IBM Corp., Hopewell Junction, NY, USA
Abstract :
In this paper we demonstrate the advantages of SiGe BiCMOS for wireless designers and discuss several wireless circuits currently available in this technology as illustrations of the value of designing in SiGe BiCMOS. Finally, we discuss the future evolution of the technology
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; integrated circuit technology; RF device applications; SiGe; SiGe BiCMOS technology; wireless applications; BiCMOS integrated circuits; CMOS technology; Costs; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Isolation technology; Noise figure; Radio frequency; Silicon germanium;
Conference_Titel :
Radio and Wireless Conference, 1999. RAWCON 99. 1999 IEEE
Conference_Location :
Denver, CO
Print_ISBN :
0-7803-5454-0
DOI :
10.1109/RAWCON.1999.810985
