DocumentCode
3393255
Title
InGaAs photodiodes as an emitter of THz waves for 1560 nm pulse excitation
Author
Kadoya, Y. ; Matsui, T. ; Takazato, A. ; Kitagawa, J.
Author_Institution
Dept. of Quantum Matter, Hiroshima Univ., Higashi-Hiroshima
fYear
2007
fDate
2-9 Sept. 2007
Firstpage
987
Lastpage
988
Abstract
THz-emission by InGaAs photodiodes with 1560 nm pulse excitation was investigated. From the comparison with the photoconductive antenna on low-temperature-grown GaAs excited at 780 nm, it was found that the photodiodes emit sufficiently strong THz waves with a spectral range reaching 3 THz.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; photodiodes; submillimetre wave diodes; InGaAs; THz waves; THz-emission; emitter; photoconductive antenna; photodiodes; pulse excitation; wavelength 1560 nm; Detectors; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Laser excitation; Optical pulse generation; Optical pulses; Photodiodes; Substrates; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on Terahertz Electronics. IRMMW-THz. Joint 32nd International Conference on
Conference_Location
Cardiff
Print_ISBN
978-1-4244-1438-3
Type
conf
DOI
10.1109/ICIMW.2007.4516821
Filename
4516821
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