Title :
InGaAs photodiodes as an emitter of THz waves for 1560 nm pulse excitation
Author :
Kadoya, Y. ; Matsui, T. ; Takazato, A. ; Kitagawa, J.
Author_Institution :
Dept. of Quantum Matter, Hiroshima Univ., Higashi-Hiroshima
Abstract :
THz-emission by InGaAs photodiodes with 1560 nm pulse excitation was investigated. From the comparison with the photoconductive antenna on low-temperature-grown GaAs excited at 780 nm, it was found that the photodiodes emit sufficiently strong THz waves with a spectral range reaching 3 THz.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photodiodes; submillimetre wave diodes; InGaAs; THz waves; THz-emission; emitter; photoconductive antenna; photodiodes; pulse excitation; wavelength 1560 nm; Detectors; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Laser excitation; Optical pulse generation; Optical pulses; Photodiodes; Substrates; Voltage;
Conference_Titel :
Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on Terahertz Electronics. IRMMW-THz. Joint 32nd International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1438-3
DOI :
10.1109/ICIMW.2007.4516821
