Highly efficient 2.2-GHz Si power MOSFETs for cellular base station applications

Author

Morikawa, M. ; Nakura, K. ; Ito, M. ; Machida, N. ; Yamada, S. ; Kudo, S. ; Shimizu, S. ; Yoshida, I.

Author_Institution

Semicond. & Integrated Circuits Div., Hitachi Ltd., Tokyo, Japan

fYear

1999

fDate

1999

Firstpage

305

Lastpage

307

Abstract

A 2.2-GHz Si power MOSFET with high output power and high drain efficiency has been developed for cellular base station applications. This device has an LDMOS structure with a sub-micron gate. Internal matched circuits for input and output impedance matching consist of MOS capacitor chips and Al bonding wires. In a push-pull configuration and 2.2-GHz operation, the MOSFET has output power of 120 W, power gain of 10.8 dB, and drain efficiency of 45%

Keywords

UHF field effect transistors; cellular radio; impedance matching; power MOSFET; silicon; 10.8 dB; 120 W; 2.2 GHz; 45 percent; Al bonding wires; LDMOS structure; MOS capacitor chips; Si; Si power MOSFET; cellular base station applications; high drain efficiency; high output power; input impedance matching; internal matched circuits; output impedance matching; push-pull configuration; sub-micron gate; Artificial intelligence; Base stations; Bonding; Circuits; FETs; Impedance matching; MOS capacitors; MOSFETs; Packaging; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Conference, 1999. RAWCON 99. 1999 IEEE

Conference_Location

Denver, CO

Print_ISBN

0-7803-5454-0

Type

conf

DOI

10.1109/RAWCON.1999.810991

Filename

810991