Title :
Watt level GaAs PHEMT power amplifiers 26 GHz and 40 GHz for wireless applications
Author :
Sovero, Emilio A. ; Kwon, Youngwoo ; Deakin, Don S. ; Hong, John
Author_Institution :
Sci. Center, Rockwell Int. Corp., Thousand Oaks, CA, USA
Abstract :
The authors report on the design, fabrication and performance of 1 W amplifiers for 26 GHz and 40 GHz. The design approach uses standard MMIC elements: microstrip transmission lines, MIM capacitors, through-the-substrate vias for low impedance ground connection, two metal levels, air bridge crossovers and 75 μm substrates. The substrate material is grown by MBE, and for higher output power has double heterojunction channels. A Leica 10.6 electron beam lithography (EBL) machine defined the transistor gates. The gates are nominally 0.18 μm long. A plasma process that achieves excellent yield and reproducibility provides the gate recess
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; electron beam lithography; field effect MIMIC; field effect MMIC; gallium arsenide; integrated circuit design; millimetre wave power amplifiers; 1 W; 26 GHz; 40 GHz; GaAs; Leica 10.6 electron beam lithography; MBE substrate material; MIM capacitors; MMIC elements; PHEMT power amplifiers; air bridge crossovers; design; double heterojunction channels; fabrication; gate recess; low impedance ground connection; microstrip transmission lines; plasma process; through-the-substrate vias; wireless applications; Bridges; Fabrication; Gallium arsenide; Impedance; MIM capacitors; MMICs; Microstrip; PHEMTs; Power amplifiers; Power transmission lines;
Conference_Titel :
Radio and Wireless Conference, 1999. RAWCON 99. 1999 IEEE
Conference_Location :
Denver, CO
Print_ISBN :
0-7803-5454-0
DOI :
10.1109/RAWCON.1999.810992
