DocumentCode :
3394143
Title :
Nanomechanical non-volatile memory for computing at extreme
Author :
Ranganathan, Vaishnavi ; He, Tian ; Rajgopal, Srihari ; Mehregany, Mehran ; Feng, Philip X.-L ; Bhunia, Swarup
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Case Western Reserve Univ., Cleveland, OH, USA
fYear :
2013
fDate :
15-17 July 2013
Firstpage :
44
Lastpage :
45
Abstract :
A computing platform that works under extreme conditions (> 250 °C and at radiation > 1 Mrad) can be attractive in a number of important application areas, including automotive, space and avionics. Nanoelectromechanical systems (NEMS) switches have emerged as promising candidates for computing in harsh environment. Designing reliable memory specifically non-volatile memory is a major challenge for these computing systems. In this paper, we propose a novel non-volatile memory (NVM) design for reliable operation in extreme environment using NEMS structure. It exploits a common failure mode in these devices, namely stiction. Unlike traditional charge-based memories, it relies on the mechanical state of a NEMS switch as information carrier. We analyze device and circuit-level design issues to enable robust NVM array implementation with NEMS devices.
Keywords :
failure analysis; high-temperature electronics; logic design; microswitches; nanoelectromechanical devices; random-access storage; stiction; NEMS device; NEMS structure; NEMS switch; NVM design; automotive; avionics; charge-based memories; circuit-level design; computing platform; device design; extreme condition; extreme environment; failure mode; harsh environment; information carrier; nanoelectromechanical systems; nanomechanical nonvolatile memory; nonvolatile memory design; reliable memory design; reliable operation; robust NVM array implementation; space; stiction; Arrays; JFETs; Logic gates; Nanoelectromechanical systems; Nonvolatile memory; Silicon carbide; Structural beams;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoscale Architectures (NANOARCH), 2013 IEEE/ACM International Symposium on
Conference_Location :
Brooklyn, NY
Print_ISBN :
978-1-4799-0873-8
Type :
conf
DOI :
10.1109/NanoArch.2013.6623042
Filename :
6623042
Link To Document :
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