DocumentCode
3394156
Title
SATSoT: A methodology to map controllable-polarity devices on a regular fabric using SAT
Author
Gasnier, Catherine ; Gaillardon, Pierre-Emmanuel ; De Micheli, G.
Author_Institution
Integrated Syst. Lab. (LSI), EPFL, Lausanne, Switzerland
fYear
2013
fDate
15-17 July 2013
Firstpage
46
Lastpage
51
Abstract
Devices with controllable-polarity, such as Double-Gate Vertically-Stacked Nanowire FETs, have shown promising interests in recent years to implement XOR-based logic functions in an unprecedented compact way. Such a compactness is obtained at the cost of a denser interconnect, that can be mitigated by designing an efficient hyper-regular layout structure, called Sea-of-Tiles. In this paper, we propose a methodology, based on Boolean satisfiability, to map netlists of transistors on such a structure. The methodology endeavors to minimize the wiring complexity, by maximizing the sharing of the different terminals. We showed that its implementation, SATSoT, is able to automatically generate compact mappings with wiring complexities similar to manual layouts.
Keywords
Boolean algebra; computability; fabrics; field effect transistors; nanowires; Boolean satisfiability; SATSoT; Sea-of-Tiles; XOR-based logic functions; compactness; controllable-polarity devices; double-gate vertically-stacked nanowire FET; regular fabric; wiring complexity; Complexity theory; Libraries; Logic gates; Pins; Tiles; Transistors; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoscale Architectures (NANOARCH), 2013 IEEE/ACM International Symposium on
Conference_Location
Brooklyn, NY
Print_ISBN
978-1-4799-0873-8
Type
conf
DOI
10.1109/NanoArch.2013.6623043
Filename
6623043
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