• DocumentCode
    3394156
  • Title

    SATSoT: A methodology to map controllable-polarity devices on a regular fabric using SAT

  • Author

    Gasnier, Catherine ; Gaillardon, Pierre-Emmanuel ; De Micheli, G.

  • Author_Institution
    Integrated Syst. Lab. (LSI), EPFL, Lausanne, Switzerland
  • fYear
    2013
  • fDate
    15-17 July 2013
  • Firstpage
    46
  • Lastpage
    51
  • Abstract
    Devices with controllable-polarity, such as Double-Gate Vertically-Stacked Nanowire FETs, have shown promising interests in recent years to implement XOR-based logic functions in an unprecedented compact way. Such a compactness is obtained at the cost of a denser interconnect, that can be mitigated by designing an efficient hyper-regular layout structure, called Sea-of-Tiles. In this paper, we propose a methodology, based on Boolean satisfiability, to map netlists of transistors on such a structure. The methodology endeavors to minimize the wiring complexity, by maximizing the sharing of the different terminals. We showed that its implementation, SATSoT, is able to automatically generate compact mappings with wiring complexities similar to manual layouts.
  • Keywords
    Boolean algebra; computability; fabrics; field effect transistors; nanowires; Boolean satisfiability; SATSoT; Sea-of-Tiles; XOR-based logic functions; compactness; controllable-polarity devices; double-gate vertically-stacked nanowire FET; regular fabric; wiring complexity; Complexity theory; Libraries; Logic gates; Pins; Tiles; Transistors; Wiring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoscale Architectures (NANOARCH), 2013 IEEE/ACM International Symposium on
  • Conference_Location
    Brooklyn, NY
  • Print_ISBN
    978-1-4799-0873-8
  • Type

    conf

  • DOI
    10.1109/NanoArch.2013.6623043
  • Filename
    6623043