DocumentCode :
3394156
Title :
SATSoT: A methodology to map controllable-polarity devices on a regular fabric using SAT
Author :
Gasnier, Catherine ; Gaillardon, Pierre-Emmanuel ; De Micheli, G.
Author_Institution :
Integrated Syst. Lab. (LSI), EPFL, Lausanne, Switzerland
fYear :
2013
fDate :
15-17 July 2013
Firstpage :
46
Lastpage :
51
Abstract :
Devices with controllable-polarity, such as Double-Gate Vertically-Stacked Nanowire FETs, have shown promising interests in recent years to implement XOR-based logic functions in an unprecedented compact way. Such a compactness is obtained at the cost of a denser interconnect, that can be mitigated by designing an efficient hyper-regular layout structure, called Sea-of-Tiles. In this paper, we propose a methodology, based on Boolean satisfiability, to map netlists of transistors on such a structure. The methodology endeavors to minimize the wiring complexity, by maximizing the sharing of the different terminals. We showed that its implementation, SATSoT, is able to automatically generate compact mappings with wiring complexities similar to manual layouts.
Keywords :
Boolean algebra; computability; fabrics; field effect transistors; nanowires; Boolean satisfiability; SATSoT; Sea-of-Tiles; XOR-based logic functions; compactness; controllable-polarity devices; double-gate vertically-stacked nanowire FET; regular fabric; wiring complexity; Complexity theory; Libraries; Logic gates; Pins; Tiles; Transistors; Wiring;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoscale Architectures (NANOARCH), 2013 IEEE/ACM International Symposium on
Conference_Location :
Brooklyn, NY
Print_ISBN :
978-1-4799-0873-8
Type :
conf
DOI :
10.1109/NanoArch.2013.6623043
Filename :
6623043
Link To Document :
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