Title :
Impact of PCM resistance-drift in neuromorphic systems and drift-mitigation strategy
Author :
Suri, Manan ; Garbin, David ; Bichler, Olivier ; Querlioz, Damien ; Vuillaume, Dominique ; Gamrat, Christian ; DeSalvo, B.
Author_Institution :
CEA-LETI-MINATEC, Grenoble, France
Abstract :
Neuromorphic architectures that exploit emerging resistive memory devices as synapses are currently receiving a lot of interest. Phase Change Memory (PCM), in particular, is a strong candidate for such architectures. However, it suffers from a resistance-drift effect in the amorphous phase (high-resistance). In this work, we investigate the impact of resistance-drift in `Learning-´ and `Read-´ mode operation of large-scale hybrid neuromorphic architectures that use bio-inspired `STDP-type´ learning rules. We show that our `2- PCM Synapse´ approach is inherently tolerant to resistance-drift. We also present a new architecture (`Binary-PCM Synapse´) and programming strategy based on partial-reset states of PCM devices, which strongly minimizes the impact of resistance-drift. To benchmark the two programming approaches and architectures, we perform system-level simulations on a complex visual pattern extraction application. A power consumption analysis for the two approaches is finally presented. It highlights the ultra low-power potential of PCM-based neuromorphic computing.
Keywords :
feature extraction; low-power electronics; neural chips; phase change memories; Drift-Mitigation Strategy; Neuromorphic Systems; PCM Resistance-Drift; binary-PCM synapse; bio-inspired STDP-type learning rules; complex visual pattern extraction; large-scale hybrid neuromorphic architectures; learning-mode operation; partial-reset states; power consumption analysis; programming strategy; read-mode operation; system-level simulations; Computer architecture; Neuromorphics; Neurons; Phase change materials; Programming; Resistance; Visualization;
Conference_Titel :
Nanoscale Architectures (NANOARCH), 2013 IEEE/ACM International Symposium on
Conference_Location :
Brooklyn, NY
Print_ISBN :
978-1-4799-0873-8
DOI :
10.1109/NanoArch.2013.6623059