DocumentCode :
3394747
Title :
On the accuracy of return path assumption for loop inductance extraction for 0.1 μm technology and beyond
Author :
Kim, SoYoung ; Massoud, Yehia ; Wong, S. Simon
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
fYear :
2003
fDate :
24-26 March 2003
Firstpage :
401
Lastpage :
404
Abstract :
The most common assumption for chip-level inductance extraction is to restrict the current return path to the closest power or ground lines. This paper shows that this assumption is not necessarily valid for technologies beyond 0.1 μm. The actual inductance can exceed twice the value that is extracted from the model considering only the nearest current return paths. Analytical formulae to predict the worst case self inductance are proposed to deal with the errors that result from this assumption. These equations can be used as metrics to decide the size of inductance extraction window for future CAD tools.
Keywords :
inductance; integrated circuit interconnections; integrated circuit modelling; 0.1 micron; CAD tools; chip level inductance extraction; ground lines; loop inductance; return path assumption; self inductance; Circuit noise; Circuit simulation; Computational modeling; Equations; Frequency; Inductance; Performance analysis; Timing; Wires; Working environment noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality Electronic Design, 2003. Proceedings. Fourth International Symposium on
Print_ISBN :
0-7695-1881-8
Type :
conf
DOI :
10.1109/ISQED.2003.1194766
Filename :
1194766
Link To Document :
بازگشت