• DocumentCode
    3394780
  • Title

    Analysis on the structure and electrical property of PI/MWNTs films

  • Author

    Wu, Zijian ; Zhang, Mingyan ; Tian, Feng ; Diao, Penghe ; Zhu, Xiaoying ; Wang, Jihua

  • Author_Institution
    Coll. of Mater. Sci., Key Lab. of Eng. Dielectric & Its Applic., Harbin Univ. of Sci. & Technol., Harbin, China
  • fYear
    2009
  • fDate
    19-23 July 2009
  • Firstpage
    773
  • Lastpage
    776
  • Abstract
    In this paper, Polyimide/mutil-walled carbon nanotube(PI/MWNTs) nanocomposites were fabricated by an in-situ polymerization process. Scanning electron microscopy(SEM) was used to analyze the microstructure of the surface and cross-section shape. The relationship between the structure of the films and the electrical property including the dielectric constant epsivr, the dielectric loss factor tandelta and the volume resistivity was researched. The results showed that the addition of acid-modified MWNTs into a polyimide matrix led to some variations in the dielectric properties, dielectric constant increased at first then decreased with the increase of the content of MWNTs, the variation of dielectric loss is not obvious when doping content of MWNTs is lower than 1.5 wt%, with the content of MWNTs increased continuously, the dielectric loss improved significantly. As the doping content reached 11.598 wt%, the volume resistivity of PI/MWNTs films sharply decreased to 1.96 times 108Omegamiddotm.
  • Keywords
    carbon nanotubes; nanocomposites; nanofabrication; permittivity; polymerisation; scanning electron microscopy; PI/MWNTs films; dielectric constant; electrical property; nanocomposites; polyimide/mutilwalled carbon nanotube; scanning electron microscopy; Carbon nanotubes; Conductivity; Dielectric constant; Dielectric losses; Doping; Microstructure; Nanocomposites; Polyimides; Polymers; Scanning electron microscopy; PI-MWNTs; electrical property; structure;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Properties and Applications of Dielectric Materials, 2009. ICPADM 2009. IEEE 9th International Conference on the
  • Conference_Location
    Harbin
  • Print_ISBN
    978-1-4244-4367-3
  • Electronic_ISBN
    978-1-4244-4368-0
  • Type

    conf

  • DOI
    10.1109/ICPADM.2009.5252151
  • Filename
    5252151