An analytical model for AlGaAs/GaAs HEMTs at large gate voltage

Author

Aziz, M.A. ; El-Banna, M.

Author_Institution

Egyptian Armed Forces, Egypt

Volume

2

fYear

1997

fDate

3-6 Aug 1997

Firstpage

1310

Abstract

An accurate analytical model for HEMTs at large gate voltage is presented. A developed self-consistent charge-control model is used to calculate the electron density in both 2DEG and AlGaAs channels. An analytical function, originally used to calculate the electron concentration in 2DEG, is proposed to be used for channel electrons in AlGaAs. A single analytical expression for the drain currents in AlGaAs and in 2DEG layers is obtained. Detailed analysis of different modes of operation is also presented. The theoretical predictions of the model have been confirmed through the obtained agreement with the experimental data available in the literature

Keywords

III-V semiconductors; aluminium compounds; electron density; gallium arsenide; high electron mobility transistors; semiconductor device models; 2DEG channels; AlGaAs-GaAs; HEMTs; III-V semiconductors; analytical model; channel electrons; drain currents; electron density; gate voltage; self-consistent charge-control model; Analytical models; Circuit noise; Digital circuits; Electrons; Gallium arsenide; HEMTs; Low voltage; MODFETs; Microwave devices; Predictive models;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1997. Proceedings of the 40th Midwest Symposium on

Conference_Location

Sacramento, CA

Print_ISBN

0-7803-3694-1

Type

conf

DOI

10.1109/MWSCAS.1997.662322

Filename

662322