Title :
A behavioural nonlinear SiGe-HBT model based on Gummel-Poon topology
Author :
Megherbi, S. ; Yahiaoui, C. ; Pone, J.F.
Author_Institution :
Inst. d´´Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France
Abstract :
We aimed at building an evolutive Gummel-Poon model dedicated to design of integrated SiGe-HBT cells, easy to incorporate in electrical simulators, and able to take into account the various types of carrier transport that are liable to occur in the behaviour of Si/Si1-xGex/Si HBT. In order to test the model, we compared the theoretical records with experimental published results. An interesting feature of this model is that it provides the electrical operation of SiGe-HBT devices derived from technological and geometrical parameters.
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; silicon; Gummel-Poon topology; HBT model; Si-SiGe-Si; behavioural nonlinear model; carrier transport; electrical simulators; geometrical parameters; Binary search trees; Breakdown voltage; Buildings; Diodes; Electron emission; Electronic mail; Heterojunction bipolar transistors; Polarization; Solid modeling; Topology;
Conference_Titel :
Circuits and Systems, 1997. Proceedings of the 40th Midwest Symposium on
Print_ISBN :
0-7803-3694-1
DOI :
10.1109/MWSCAS.1997.662323
