Comparison of SEM and HRTEM CD measurements extracted from test-structures having feature linewidths from 40 nm to 240 nm

Author

Cresswell, Michael W. ; Park, Brandon ; Allen, Richard A. ; Guthrie, William F. ; Dixson, Ronald G. ; Tan, Wei Mira ; Murabito, Christine E.

Author_Institution

Electron. & Electr. Eng. Lab., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA

fYear

2005

fDate

4-7 April 2005

Firstpage

11

Lastpage

16

Abstract

CD (critical dimension) measurements have been extracted from SEM (scanning electron microscope) and HRTEM (high resolution transmission electron microscopy) images of the same set of monocrystalline silicon features having linewidths between 40 and 240 nm. The silicon features are incorporated into a new test structure that has been designed to facilitate this type of CD-metrology study. The purpose of the work was to characterize the calibration statistics of SEM transfer-metrology when HRTEM is used as primary metrology in CD reference material calibration.

Keywords

calibration; measurement uncertainty; scanning electron microscopy; size measurement; transfer standards; transmission electron microscopy; 40 to 240 nm; CD reference material calibration; CD-metrology; CD-uncertainty analysis; HRTEM CD measurements; SEM CD measurements; SEM transfer-metrology calibration statistics; Si; critical dimension measurements; high resolution transmission electron microscopy images; monocrystalline silicon features; scanning electron microscope images; test structure feature linewidths; Atomic force microscopy; Calibration; Data mining; Laboratories; Metrology; NIST; Scanning electron microscopy; Silicon; Testing; Uncertainty;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2005. ICMTS 2005. Proceedings of the 2005 International Conference on

Print_ISBN

0-7803-8855-0

Type

conf

DOI

10.1109/ICMTS.2005.1452204

Filename

1452204