Title :
Impact of mask alignment on the tunneling field effect transistor (TFET)
Author :
Nirschl, Th ; Schaper, U. ; Einfeld, J. ; Henzler, St. ; Sterkel, M. ; Singer, J. ; Fulde, M. ; Hansch, W. ; Georgakos, G. ; Schmitt-Landsiedel, D.
Author_Institution :
Inst. for Tech. Electron., Tech. Univ. Munich, Germany
Abstract :
The tunneling field effect transistor (TFET) is a standard CMOS process flow compatible device which shows improved short channel characteristics and lower static power consumption. The device is generated by the p-implant layer overlapping the source extension. A test-structure is proposed to investigate the impact of the alignment of the p-implant mask on the device characteristics.
Keywords :
doping profiles; field effect transistors; masks; semiconductor device measurement; tunnelling; CMOS process flow compatible device; TFET; low static power consumption; p-implant mask alignment; quantum-mechanical device; short channel characteristics; source extension overlapping p-implant layer; tunneling field effect transistor; CMOS process; CMOS technology; Charge carrier density; Diodes; Electrons; Energy consumption; FETs; MOSFET circuits; Testing; Tunneling;
Conference_Titel :
Microelectronic Test Structures, 2005. ICMTS 2005. Proceedings of the 2005 International Conference on
Print_ISBN :
0-7803-8855-0
DOI :
10.1109/ICMTS.2005.1452216
