Test structure for performance evaluation of 3 dimensional FinFETs

The 3D MOSFET have been recognized as the main technology to substitute planar MOSFET beyond 50 nm. The development of various test structures is required to evaluate the characteristics of the new dimension. FinFET having 0, 45° rotated active directions from flat zone were evaluated, because those are critical for Si orientation of surface channel on the fin. In this paper, the performance and the reliability evaluation of 3D FinFET were performed by using two different test structures. The body tied FinFET having two different rotation angles θ=0, 45° were designed. The "θ" indicates the angle between the channel direction of the FinFET and the <110> flat zone. The electrical characteristics and reliability of the FinFET θ(45°) were measured and compared to those of the FinFET θ(0°).