• DocumentCode
    3395661
  • Title

    Recent trends in reliability assessment of advanced CMOS technologies

  • Author

    Groeseneken, Guido ; Degraeve, Robin ; Kaczer, Ben ; Roussel, Philippe

  • Author_Institution
    IMEC, Leuven, Belgium
  • fYear
    2005
  • fDate
    4-7 April 2005
  • Firstpage
    81
  • Lastpage
    88
  • Abstract
    It is demonstrated that by applying the classical way of reliability lifetime prediction, the reliability of a product can no longer be guaranteed in some cases and for some failure mechanisms for the most advanced CMOS technologies. As a result, the reliability engineers started to rethink the classical reliability assessment methodology. Some elements of such a new assessment methodology are illustrated by a case study of oxide breakdown as failure mechanism. This will, however, require more interaction between technology, reliability and design engineers, in order to define realistic failure specifications and new chip failure criteria for each type of circuit.
  • Keywords
    MIS devices; semiconductor device models; semiconductor device reliability; advanced CMOS technologies; chip failure criteria; failure mechanisms; failure specifications; oxide breakdown; reliability assessment; reliability lifetime prediction; CMOS technology; Circuits; Design engineering; Electric breakdown; Extrapolation; Failure analysis; Materials reliability; Reliability engineering; Stress; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 2005. ICMTS 2005. Proceedings of the 2005 International Conference on
  • Print_ISBN
    0-7803-8855-0
  • Type

    conf

  • DOI
    10.1109/ICMTS.2005.1452230
  • Filename
    1452230