DocumentCode
3395661
Title
Recent trends in reliability assessment of advanced CMOS technologies
Author
Groeseneken, Guido ; Degraeve, Robin ; Kaczer, Ben ; Roussel, Philippe
Author_Institution
IMEC, Leuven, Belgium
fYear
2005
fDate
4-7 April 2005
Firstpage
81
Lastpage
88
Abstract
It is demonstrated that by applying the classical way of reliability lifetime prediction, the reliability of a product can no longer be guaranteed in some cases and for some failure mechanisms for the most advanced CMOS technologies. As a result, the reliability engineers started to rethink the classical reliability assessment methodology. Some elements of such a new assessment methodology are illustrated by a case study of oxide breakdown as failure mechanism. This will, however, require more interaction between technology, reliability and design engineers, in order to define realistic failure specifications and new chip failure criteria for each type of circuit.
Keywords
MIS devices; semiconductor device models; semiconductor device reliability; advanced CMOS technologies; chip failure criteria; failure mechanisms; failure specifications; oxide breakdown; reliability assessment; reliability lifetime prediction; CMOS technology; Circuits; Design engineering; Electric breakdown; Extrapolation; Failure analysis; Materials reliability; Reliability engineering; Stress; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 2005. ICMTS 2005. Proceedings of the 2005 International Conference on
Print_ISBN
0-7803-8855-0
Type
conf
DOI
10.1109/ICMTS.2005.1452230
Filename
1452230
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