DocumentCode :
3395661
Title :
Recent trends in reliability assessment of advanced CMOS technologies
Author :
Groeseneken, Guido ; Degraeve, Robin ; Kaczer, Ben ; Roussel, Philippe
Author_Institution :
IMEC, Leuven, Belgium
fYear :
2005
fDate :
4-7 April 2005
Firstpage :
81
Lastpage :
88
Abstract :
It is demonstrated that by applying the classical way of reliability lifetime prediction, the reliability of a product can no longer be guaranteed in some cases and for some failure mechanisms for the most advanced CMOS technologies. As a result, the reliability engineers started to rethink the classical reliability assessment methodology. Some elements of such a new assessment methodology are illustrated by a case study of oxide breakdown as failure mechanism. This will, however, require more interaction between technology, reliability and design engineers, in order to define realistic failure specifications and new chip failure criteria for each type of circuit.
Keywords :
MIS devices; semiconductor device models; semiconductor device reliability; advanced CMOS technologies; chip failure criteria; failure mechanisms; failure specifications; oxide breakdown; reliability assessment; reliability lifetime prediction; CMOS technology; Circuits; Design engineering; Electric breakdown; Extrapolation; Failure analysis; Materials reliability; Reliability engineering; Stress; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures, 2005. ICMTS 2005. Proceedings of the 2005 International Conference on
Print_ISBN :
0-7803-8855-0
Type :
conf
DOI :
10.1109/ICMTS.2005.1452230
Filename :
1452230
Link To Document :
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