Title :
Accelerated life time estimation of electrostatic microactuators
Author :
Caillard, B. ; Mita, Y. ; Fukuta, Y. ; Shibata, T. ; Fujita, H.
Author_Institution :
LIMMS, Univ. Tokyo/IIS/CNRS, Tokyo, Japan
Abstract :
There is an absolute need of accelerated life time measurement for MEMS actuators. In this paper, a simple method is proposed. It relies on very low frequency electrical detection of the failures and on high voltage testing, since a relationship between mean time before failure and driving voltage is proved. A time gain factor of 20 is reached with test structures used in real applications. An experimental set-up is described and results obtained with electrostatic microactuators with parallel capacitances made using deep RIE etching on SOI wafers are shown.
Keywords :
capacitance; electrostatic actuators; high-voltage techniques; life testing; silicon-on-insulator; sputter etching; MEMS actuators; SOI wafers; accelerated life time measurement; deep RIE etching; driving voltage; electrostatic microactuators; failures; high voltage testing; mean time before failure; parallel capacitances; very low frequency electrical detection; Acceleration; Actuators; Electrostatics; Frequency; Life estimation; Microactuators; Micromechanical devices; Testing; Time measurement; Voltage;
Conference_Titel :
Microelectronic Test Structures, 2005. ICMTS 2005. Proceedings of the 2005 International Conference on
Print_ISBN :
0-7803-8855-0
DOI :
10.1109/ICMTS.2005.1452234