Title :
The switching behavior of the bipolar mode field effect transistor (BMFET)
Author :
Vitale, G. ; Busatto, G. ; Ferla, G.
Author_Institution :
Dept. of Electron. Eng., Naples Univ., Italy
Abstract :
A model of the turnoff transient of the BMFET is presented. The model, which is based on an approximate yet quite accurate model of its operation, clarifies the physical phenomena that take place during its switching on a resistive load. It allows also the effects of the device geometry and transport parameters on its dynamic properties to be studied. Using the theoretical model, the reasons for the superior switching performance of the BMFET are investigated, showing that together with its very low on-state voltage the BMFET has extremely fast fall times that are comparable to those of power MOSFETs. It has also been demonstrated that the model is in good quantitative agreement with the experiments. Because the model has been derived on the basis of the devices geometry and fundamental transport parameters, it is a useful tool in device design, to study the tradeoff between static and dynamic properties.<>
Keywords :
junction gate field effect transistors; power transistors; semiconductor device models; semiconductor switches; BMFET; bipolar mode field effect transistor; device geometry; dynamic properties; fast fall times; model; switching behavior; transport parameters; turnoff transient; very low on-state voltage; FETs; Geometry; Low voltage; MOSFETs; Solid modeling;
Conference_Titel :
Industry Applications Society Annual Meeting, 1988., Conference Record of the 1988 IEEE
Conference_Location :
Pittsburgh, PA, USA
DOI :
10.1109/IAS.1988.25123
