• DocumentCode
    3395820
  • Title

    Study the surface charge of both original and corona-resistant Polyimide films by Electrostatic Force Microscope

  • Author

    Sun, Zhi ; Han, Bai ; Wang, Xuan ; Lei, Qingquan

  • Author_Institution
    Coll. of Electr. & Electron. Eng., Harbin Univ. of Sci. & Technol., Harbin, China
  • fYear
    2009
  • fDate
    19-23 July 2009
  • Firstpage
    942
  • Lastpage
    945
  • Abstract
    Electrostatic Force Microscope (EFM) was applied to study the origin and decay properties of surface charge on original and corona-resistant Polyimide films in micro-nanometer scale. The surface charge were generated by injecting on the surfaces of the polyimide (PI) films using the conductive probe of EFM. After the surface charge were characterized by EFM, the results indicate that the difference origin and decay properties between original (100HN) and corona-resistant (100CR) polyimide films. Corona-resistant polyimide film accumulated less surface charge after injected charge and quicker decay, so the residual charge smaller than original Polyimide films. The decay time constant corresponding to the resistivity of each film. The research provides a new way for study on the rule and mechanism of generating and decaying surface charge on the insulated films and can be used to partially explain the mechanism of corona resistant.
  • Keywords
    atomic force microscopy; charge injection; polymer films; surface charging; charge injection; conductive probe; corona-resistant polyimide films; decay time constant; electrostatic force microscope; resistivity; surface charge; Atomic force microscopy; Dielectric materials; Educational technology; Electron microscopy; Electrostatics; Frequency; Polyimides; Probes; Pulse width modulation; Surface topography; Electrostatic Force Microscope (EFM); corona resistant; polyimide (PI); surface charge decay;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Properties and Applications of Dielectric Materials, 2009. ICPADM 2009. IEEE 9th International Conference on the
  • Conference_Location
    Harbin
  • Print_ISBN
    978-1-4244-4367-3
  • Electronic_ISBN
    978-1-4244-4368-0
  • Type

    conf

  • DOI
    10.1109/ICPADM.2009.5252252
  • Filename
    5252252