DocumentCode
3395874
Title
An improved model for SCR and TRIAC
Author
Wong, S.C. ; Lin, H.C.
Author_Institution
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
fYear
1988
fDate
2-7 Oct. 1988
Firstpage
629
Abstract
The authors present a SCR (silicon-controlled rectifier) model with an intrinsic three-junction configuration. The conductivity modulation in the high-current region and the SNS (Sah-Noyce-Shockley) recombination in the low-current region are both considered, and the on-state DC I-V curve is calibrated numerically with respect to the data specification sheet. This model has advantages of both flexibility and accuracy over existing models, while still preserving the simplicity. The model can be easily extended for triac modeling.<>
Keywords
semiconductor device models; thyristors; SCR; SNS recombination; Sah-Noyce-Shockley recombination; TRIAC; conductivity modulation; high-current region; intrinsic three-junction configuration; low-current region; model; on-state DC I-V curve; silicon-controlled rectifier; Conductivity; Rectifiers; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Society Annual Meeting, 1988., Conference Record of the 1988 IEEE
Conference_Location
Pittsburgh, PA, USA
Type
conf
DOI
10.1109/IAS.1988.25128
Filename
25128
Link To Document