• DocumentCode
    3396485
  • Title

    A new method for precise evaluation of dynamic recovery of negative bias temperature instability

  • Author

    Aota, S. ; Fujii, S. ; Jin, Z. ; Ito, Y. ; Utsumi, K. ; Morifuji, E. ; Yamada, S. ; Matsuoka, E. ; Noguchi, T.

  • Author_Institution
    Syst. LSI Div. I, Toshiba Corp., Semicond. Co., Japan
  • fYear
    2005
  • fDate
    4-7 April 2005
  • Firstpage
    197
  • Lastpage
    199
  • Abstract
    It has been reported that the dynamic recovery of drain current (Id) takes place soon after the stress applied on the gate is removed during a MOSFET negative bias temperature instability (NBTI) experiment. This phenomenon makes it very difficult to estimate the NBTI degradation of Id (ΔId) correctly. The paper presents a new characterization method in which the effect of the dynamic recovery is quantitatively taken into account to estimate ΔId precisely.
  • Keywords
    MOS integrated circuits; MOSFET; electric current; electric potential; parameter estimation; thermal stability; degradation estimation; drain current; dynamic recovery; gate stress; large-scale-integrated devices; measurement system; negative bias temperature instability; Degradation; Insulation; Large scale integration; MOSFETs; Negative bias temperature instability; Niobium compounds; Stress measurement; Time measurement; Titanium compounds; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 2005. ICMTS 2005. Proceedings of the 2005 International Conference on
  • Print_ISBN
    0-7803-8855-0
  • Type

    conf

  • DOI
    10.1109/ICMTS.2005.1452262
  • Filename
    1452262
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3396485