Title :
The influences of annealing temperature on the microstructure and electric properties of ZnO varistors
Author :
Zheng, Liaoying ; Zheng Yao ; Li, Guorong
Author_Institution :
State Key Lab. of High Performance Ceramics & Superfine Microstructure, Chinese Acad. of Sci., Shanghai, China
Abstract :
In this paper, the microstructure, phase structure and electric properties of the ZnO varistors after annealing at different temperature were researched. The varistors were prepared by the ordinary sintering process using the raw powders crushed and mixed in a high-energy ball milling. From the results of SEM and XRD, it was found that the thickness of the grain boundary was broadened with the increase of temperature. This phenomenon was raised by the phase transition of Bi2O3 in the phase boundary. To make clear the influence of the annealing temperature on the I-V nonlinear property of the varistors, the donor density, acceptor density, barrier height and activation energy of the varistors subjected to the different annealing temperature ranging from 673 K to 973 K were also studied by capacitance-voltage test and impedance test.
Keywords :
X-ray diffraction; annealing; ball milling; bismuth compounds; electric properties; phase transformations; scanning electron microscopy; sintering; varistors; zinc compounds; Bi2O3; I-V nonlinear property; SEM; X-ray diffraction; XRD; ZnO; acceptor density; activation energy; annealing temperature; capacitance-voltage test; donor density; electric properties; high-energy ball milling; impedance test; microstructure; phase boundary; phase structure; phase transition; scanning electron microscopy; sintering process; temperature 673 K to 973 K; varistors; Annealing; Ball milling; Grain boundaries; Microstructure; Powders; Temperature distribution; Testing; Varistors; X-ray scattering; Zinc oxide; ZnO; annealing; electric properties; varistors;
Conference_Titel :
Properties and Applications of Dielectric Materials, 2009. ICPADM 2009. IEEE 9th International Conference on the
Conference_Location :
Harbin
Print_ISBN :
978-1-4244-4367-3
Electronic_ISBN :
978-1-4244-4368-0
DOI :
10.1109/ICPADM.2009.5252286