Title :
Realization and characterization of manganese doped BST thin films for reflectarray applications
Author :
Nadaud, Kevin ; Borderon, Caroline ; Pavy, Sabrina ; Gundel, Hartmut W.
Author_Institution :
Inst. d´ Electron. et de Telecommun. de Rennes, Univ. of Nantes, Nantes, France
Abstract :
In the present work, Mn-doped Ba1-xSrxTiO3 (BST) thin films were realized by Chemical Solution Deposition (CSD) on alumina as the foreseen application for a reflect array needs integration of the ferroelectric on an insulating substrate. The optimum dopant rate to be inserted depending on the materials defect density, we have studied BST doping with a manganese content ranging from 0% to 2%. The dielectric and electrical characteristics were investigated as a function of the Mn content in the frequency range of 100 Hz to 5 GHz.
Keywords :
barium compounds; doping profiles; ferroelectric thin films; liquid phase deposition; manganese; strontium compounds; Al2O3; Ba1-xSrxTiO3:Mn; alumina; chemical solution deposition; dielectric characteristics; doping; electrical characteristics; ferroelectric material; frequency 100 Hz to 5 GHz; insulating substrate; manganese doped BST thin films; materials defect density; optimum dopant rate; reflectarray applications; Dielectric losses; Doping; Frequency measurement; Manganese; Materials; Permittivity; BST; Mn-doping; ferroelectric; microwave; thin film;
Conference_Titel :
Applications of Ferroelectric and Workshop on the Piezoresponse Force Microscopy (ISAF/PFM), 2013 IEEE International Symposium on the
Conference_Location :
Prague
DOI :
10.1109/ISAF.2013.6748697
