Title :
Research of Magnetron Sputtering Plasma Characteristics and Load Matching Based on Pulse Bias
Author :
Xiping Huang ; Suxia Zhao ; Qiang Sun ; Guitao Chen
Author_Institution :
Dept. of Autom. & Inf. Eng., Xi´an Univ. of Technol.Xi´an, Xi´an, China
Abstract :
A well performing thin film can be obtained by adding pulse bias on the magnetron sputtering substrate. However, serious load voltage oscillation, caused by the capacitive component in the plasma load, affects thin film deposition. The paper analyzes the cause of producing oscillation theoretically based on the magnetron sputtering plasma load equivalent circuit loop model. Although the voltage oscillation can be suppressed effectively by joining inductor or a series unit of resistor and inductor between pulsed voltage power and load circuit, the rising rate of pulsed voltage is reduced significantly. Considering this problem, a matching circuit with series inductors and diodes connected in parallel unit in load loop is introduced in the paper. Inductor inhibits oscillation and plays the role of current limiter. Freewheel diode accelerates the rising rate of voltage when the pulse voltage changes direction. Simulation and experimental verification were conducted, indicating that the method ensures the film quality by suppressing oscillation and improving the rising rate of pulsed voltage at the same time.
Keywords :
current limiters; equivalent circuits; inductors; pulsed power supplies; sputter deposition; thin films; capacitive component; current limiter; equivalent circuit loop; freewheel diode; load circuit; load matching; magnetron sputtering plasma load; magnetron sputtering substrate; matching circuit; pulse bias; pulsed voltage power; resistor; series diodes; series inductors; serious load voltage oscillation; thin film deposition; Inductors; Integrated circuit modeling; Load modeling; Magnetic circuits; Oscillators; Plasmas; Sputtering;
Conference_Titel :
Power and Energy Engineering Conference (APPEEC), 2012 Asia-Pacific
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-0545-8
DOI :
10.1109/APPEEC.2012.6307547