DocumentCode
3396855
Title
A drive circuit of MOSFET for ultrasonic power
Author
Likai Zhao ; Bonian Li ; Xiguang Wu ; Minghu Zhang ; Jie Zhang
Author_Institution
Sch. of Inf. Sci. & Eng., Lanzhou Univ., Lanzhou, China
fYear
2011
fDate
19-22 Aug. 2011
Firstpage
1911
Lastpage
1914
Abstract
This paper designs a drive circuit of MOSFET for ultrasonic power. The requirements of high-speed drive circuit of MOSFET are presented based on the turn-on and turn-off processes. The design and implementation process of MOSFET driver circuit which meets the requirements of operation frequency to 1 MHz, electrical-isolated, strong driving capability, are discussed in detail. And the feasibility of the drive circuit is proved.
Keywords
MOSFET; driver circuits; ultrasonic applications; MOSFET; frequency 1 MHz; high-speed drive circuit; turn-on-turn-off processes; ultrasonic power; Acoustics; Drives; Inverters; Logic gates; Power MOSFET; Switches; MOSFET; high-speed drive; switching characteristics;
fLanguage
English
Publisher
ieee
Conference_Titel
Mechatronic Science, Electric Engineering and Computer (MEC), 2011 International Conference on
Conference_Location
Jilin
Print_ISBN
978-1-61284-719-1
Type
conf
DOI
10.1109/MEC.2011.6025860
Filename
6025860
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