Title :
Performance investigation and optimization of Si:HfO2 FeFETs on a 28 nm bulk technology
Author :
Mueller, Steffen ; Yurchuk, Ekaterina ; Slesazeck, Stefan ; Mikolajick, Thomas ; Muller, Johannes ; Herrmann, Thomas ; Zaka, Alban
Author_Institution :
NaMLab gGmbH, Dresden, Germany
Abstract :
The film thickness dependence of ferroelectric Si:HfO2 (10 nm and 30 nm) was studied with a focus on ferroelectric field effect transistor (FeFET) memory applications based on a 28 nm bulk technology. Experimental P-E hysteresis of metal-ferroelectric-metal capacitor structures could be reproduced by a Preisach-based ferroelectric simulation model implemented in a commercially available TCAD environment. The experimentally observed thickness dependence of material characteristics was then used for demonstrating memory window widening, reduced interfacial field stress and decreased depolarization fields by FeFET TCAD modeling. Based on these findings, improved memory characteristics (memory window size, endurance, retention) can be anticipated for FeFET devices possessing the appropriate Si:HfO2 thickness.
Keywords :
capacitors; field effect transistors; hafnium compounds; optimisation; silicon; technology CAD (electronics); FeFET; P-E hysteresis; Preisach based ferroelectric simulation model; Si:HfO2; TCAD environment; ferroelectric field effect transistor; film thickness; interfacial field stress; metal-ferroelectric-metal capacitor structures; optimization; performance investigation; Adaptation models; Dielectrics; Electric fields; Hafnium compounds; Hysteresis; FeFET; Ferroelectricity; Si:HfO2; TCAD;
Conference_Titel :
Applications of Ferroelectric and Workshop on the Piezoresponse Force Microscopy (ISAF/PFM), 2013 IEEE International Symposium on the
Conference_Location :
Prague
DOI :
10.1109/ISAF.2013.6748709