• DocumentCode
    3397185
  • Title

    1.54 μm Monolithically Integrated GaSb Quantum Well Laser Diode on Silicon Operating at 77K

  • Author

    Huffaker, D.L. ; Balakrishnan, G. ; Jallipalli, A. ; Kutty, M.N. ; Tatebayashi, J. ; Huang, S.H. ; Dawson, L.R. ; Mi, Z. ; Bhattacharya, P.

  • Author_Institution
    New Mexico Univ., Albuquerque
  • fYear
    2007
  • fDate
    July 29 2007-Aug. 11 2007
  • Firstpage
    16
  • Lastpage
    17
  • Abstract
    We present a GaSb quantum well laser diode grown monolithically on a Si(100)-5° substrate. The device lases under pulsed, 77 K conditions at 1.54 μm with threshold current density of 1 kA/cm2 for a 100 μm times 1 mm stripe.
  • Keywords
    III-V semiconductors; current density; gallium compounds; integrated optoelectronics; quantum well lasers; GaSb; Si; monolithically integrated quantum well laser diode; silicon; temperature 77 K; threshold current density; wavelength 1.54 μm; Diode lasers; III-V semiconductor materials; Lattices; Materials science and technology; Optical materials; Quantum dot lasers; Semiconductor diodes; Silicon; Substrates; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-1591-5
  • Type

    conf

  • DOI
    10.1109/INOW.2007.4302845
  • Filename
    4302845
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3397185