Title :
Electrical properties of PbLaZrTiOx capacitors with conductive oxide buffer layer on Pt electrodes
Author :
Saito, Takashi ; Takada, Yasuhiro ; Tsuji, Takao ; Okamoto, N. ; Kondo, K. ; Yoshimura, Tetsuzo ; Fujimura, Naoki ; Higuchi, Kenichi ; Kitajima, A. ; Oshima, Akihiro
Author_Institution :
Dept. of Chem. Eng., Osaka Prefecture Univ., Sakai, Japan
Abstract :
Aluminum-doped zinc oxide (AZO) and indium tin oxide (ITO) were employed as a conductive oxide buffer layer on Pt(111) substrate by pulsed laser deposition (PLD). Then, PbLaZrTiOx (PLZT) thin films (thickness: 500 nm) were prepared by the sol-gel method. Finally, AZO and ITO was deposited by PLD as top electrodes with metal through mask having 50 ~ 500 μm diameter to evaluate ferroelectric properties. We measured polarization-voltage (P-V) hysteresis loops and evaluated fatigue behavior by applying 10 V, 100 μs pulse width and 1 ms interval cycles. Fatigue behavior of PLZT capacitors with AZO buffer layer (AZO/PLZT/AZO/Pt) was improved over 106 cycles, however, that was not with ITO buffer layer (AZO/PLZT/ITO/Pt).
Keywords :
II-VI semiconductors; aluminium; buffer layers; dielectric hysteresis; fatigue; ferroelectric capacitors; indium compounds; lanthanum compounds; lead compounds; piezoelectric thin films; pulsed laser deposition; sol-gel processing; tin compounds; wide band gap semiconductors; ITO; PLD; Pt; Pt(111) substrate; ZnO:Al-PBLaZrTiOx-ZnO:Al-Pt; capacitors; conductive oxide buffer layer; electrical properties; fatigue behavior; ferroelectric properties; polarization-voltage hysteresis loops; pulsed laser deposition; size 500 nm; sol-gel method; thin films; time 100 mus; voltage 10 V; Indium tin oxide; Lasers; Silicon; fatigue; ferroelectric capacitor; oxide buffer layer; pulsed laser deposition;
Conference_Titel :
Applications of Ferroelectric and Workshop on the Piezoresponse Force Microscopy (ISAF/PFM), 2013 IEEE International Symposium on the
Conference_Location :
Prague
DOI :
10.1109/ISAF.2013.6748734
