DocumentCode
3397514
Title
GaN optical devices on free-standing GaN substrates
Author
Tae-kyung Yoo ; Yoonho Choi
Author_Institution
OE Group, LG CIT, Seoul, South Korea
Volume
2
fYear
1999
fDate
Aug. 30 1999-Sept. 3 1999
Firstpage
282
Abstract
As a fundamental approach, we have reported the growth of free-standing conducting GaN substrate by hydride vapor phase epitaxy (HVPE) and have successfully demonstrated a homoepitaxially grown LED with top-bottom contact for the first time. We present device characteristics of optical devices on GaN substrates and technical issues for surface damage and stability of GaN substrates.
Keywords
III-V semiconductors; gallium compounds; light emitting diodes; substrates; vapour phase epitaxial growth; GaN; GaN optical devices; GaN substrates; HVPE; free-standing GaN substrates; free-standing conducting GaN substrate; homoepitaxially grown LED; hydride vapor phase epitaxy; stability; surface damage; top-bottom contact; Commercialization; Dielectric substrates; Diode lasers; Dry etching; Epitaxial growth; Gallium nitride; Light emitting diodes; Optical devices; Stability; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on
Conference_Location
Seoul, South Korea
Print_ISBN
0-7803-5661-6
Type
conf
DOI
10.1109/CLEOPR.1999.811414
Filename
811414
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