DocumentCode :
3397552
Title :
Elimination of parasitic generation in power X-band internally matched transistors with high associated gain
Author :
Galdetskiy, A.V. ; Manchenko, L.V. ; Pashkovskii, A.B. ; Pchelin, V.A.
Author_Institution :
Fed. State Unitary Corp. R&PC, Fryazino
fYear :
2008
fDate :
8-12 Sept. 2008
Firstpage :
75
Lastpage :
76
Abstract :
Stability problems for X-band internally matched HEMTpsilas with output power higher than 10 W, associated gain higher than 13 dB are discussed. Several variants of schematic design for parasitic generation elimination are proposed.
Keywords :
amplification; power HEMT; stability; associated gain; parasitic generation; power X-band internally matched HEMT; schematic design; stability; Crops; Helium; IEEE catalog; Microwave technology; Organizing; Power amplifiers; Power generation; Topology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-966-335-166-7
Electronic_ISBN :
978-966-335-169-8
Type :
conf
DOI :
10.1109/CRMICO.2008.4676297
Filename :
4676297
Link To Document :
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