DocumentCode :
3397554
Title :
New Optoelectronic Materials
Author :
Harris, James
Author_Institution :
Stanford Univ., Stanford
fYear :
2007
fDate :
July 29 2007-Aug. 11 2007
Firstpage :
40
Lastpage :
41
Abstract :
Optoelectronics is a very materials dependent technology. The metastable growth of new alloy materials and strain have significantly increased the performance and addressable wavelength regions due to these materials technology enhancements. The growth technologies, new materials and resulting devices are described.
Keywords :
Ge-Si alloys; III-V semiconductors; elemental semiconductors; gallium compounds; germanium; indium compounds; molecular beam epitaxial growth; optical materials; semiconductor growth; semiconductor materials; MBE; Optoelectronic Materials; addressable wavelength regions; alloy materials; metastable alloys; metastable growth; Annealing; Fiber lasers; Gallium arsenide; Indium phosphide; Lattices; Optical materials; Photonic band gap; Quantum well lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-1591-5
Type :
conf
DOI :
10.1109/INOW.2007.4302863
Filename :
4302863
Link To Document :
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