Title :
The diagnostics of heteroepitaxial structures GaAs/AlGaAs/GaAs based on technique of selective etching
Author :
Kozlovsky, E.Y. ; Seleznev, B.I.
Author_Institution :
CJSC SMF "Planeta-Argall", Veliky Novgorod
Abstract :
The technique of level-by-level etching of heterostructures GaAs/AlGaAs/GaAs with use of selective etchants is developed. Typical nomograms for definition of thickness of layers of a structure and also the estimation of electrophysical parameters of two-dimension electron gas are executed.
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium arsenide; two-dimensional electron gas; GaAs-AlGaAs; electrophysical parameters; etchants; heteroepitaxial structures; level-by-level etching; two-dimension electron gas; Etching; Gallium arsenide; Gallium nitride; IEEE catalog; Indium gallium arsenide; Indium phosphide; Indium tin oxide; Microwave technology; Organizing;
Conference_Titel :
Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-966-335-166-7
Electronic_ISBN :
978-966-335-169-8
DOI :
10.1109/CRMICO.2008.4676301
