• DocumentCode
    3397687
  • Title

    Evaluation of the Schottky barrier parameters in the micron-size metal-semiconductor contacts

  • Author

    Averin, S.V. ; Lyubchenko, V.E.

  • Author_Institution
    Inst. of Radioengineering & Electron., Russian Acad. of Sci., Fryazino
  • fYear
    2008
  • fDate
    8-12 Sept. 2008
  • Firstpage
    98
  • Lastpage
    99
  • Abstract
    We show that under certain conditions the submillimeter wave detector response of a Schottky barrier diode is a linear function of applied bias and allows evaluating the barrier height and the near-surface doping level of semiconductor in the micron-size Schottky barrier contacts.
  • Keywords
    Schottky barriers; Schottky diodes; semiconductor doping; semiconductor-metal boundaries; submillimetre wave detectors; Schottky barrier diode; linear function; metal-semiconductor contacts; near-surface doping level; submillimeter wave detector; Bills of materials; Gallium arsenide; Gold; Helium; Indium tin oxide; Microwave technology; Organizing; Schottky barriers; Schottky diodes; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    978-966-335-166-7
  • Electronic_ISBN
    978-966-335-169-8
  • Type

    conf

  • DOI
    10.1109/CRMICO.2008.4676305
  • Filename
    4676305
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3397687