Title :
Harmonic generation in transfer electron GaN diodes with impact ionization
Author :
Botsula, O.V. ; Pavlenko, D.V. ; Prokhorov, E.D. ; Vilnivetsky, S.S.
Author_Institution :
V. N. Karazin Kharkov Nat. Univ., Kharkov
Abstract :
Impact ionization in GaN diodes have been considered. The reference compounds are perspective for fabricating of centimeter and millimeter wave range transferred electron devices operating at input ionization conditions (electric field above 3 or 5 times of the threshold field and efficiency of 11...13 % ) have been shown. The value of GaN transfer electron devices oscillation efficiency to be obtained at harmonic operation has been demonstrated.
Keywords :
III-V semiconductors; gallium compounds; impact ionisation; semiconductor diodes; GaN; harmonic generation; harmonic operation; impact ionization; millimeter wave range transferred electron devices; transfer electron GaN diodes; Diodes; Electrons; Frequency conversion; Gallium arsenide; Gallium nitride; Helium; Impact ionization; Indium tin oxide;
Conference_Titel :
Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-966-335-166-7
Electronic_ISBN :
978-966-335-169-8
DOI :
10.1109/CRMICO.2008.4676309
