Title :
Low barier Schottky diodes in the technology of limiter’s production
Author :
Egorova, E.I. ; Kozlovsky, E.Y.
Author_Institution :
CJSC SMF "Planeta-Argall", Veliky Novgorod
Abstract :
The technology of low barrier Schottky diodes based on Ge-Au metallization is presented. Experimental current-voltage curves of obtained diodes and the calculated parameters of metal-semiconductor barrier are shown. The calculation of limiterpsilas characteristic is realized.
Keywords :
Schottky barriers; Schottky diodes; elemental semiconductors; germanium; gold; metallisation; semiconductor-metal boundaries; Ge-Au; current-voltage curves; limiter´s characteristic; low barrier Schottky diodes; metal-semiconductor barrier; metallization; Gallium arsenide; Helium; IEEE catalog; Indium gallium arsenide; Indium phosphide; Microwave technology; Organizing; Production; Schottky diodes;
Conference_Titel :
Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-966-335-166-7
Electronic_ISBN :
978-966-335-169-8
DOI :
10.1109/CRMICO.2008.4676313
