DocumentCode :
3397898
Title :
Combination of Nitride Semiconductor Nanostructures and Nano-photonics for Efficient Solid-state Lighting
Author :
Yang, C.C. ; Huang, Chi-Feng ; Chen, Cheng-Yen ; Yeh, Dong-Ming ; Tang, Tsung-Yi ; Lu, Yen-Cheng ; Lu, Chih-Feng ; Chen, Yung-Sheng ; Shiao, Wen-Yu ; Shen, Kun-Ching ; Huang, Jeng-Jie
Author_Institution :
Nat. Taiwan Univ., Taipei
fYear :
2007
fDate :
July 29 2007-Aug. 11 2007
Firstpage :
68
Lastpage :
69
Abstract :
Nitride nanostructures and nano-photonics, including an MOCVD prestrained InGaN/GaN quantum well growth technique for orange and white LED fabrication and surface plasmon coupling with an InGaN/GaN quantum well for light emission enhancement, are reported.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; indium compounds; nanostructured materials; nanotechnology; photoluminescence; semiconductor growth; semiconductor quantum wells; surface plasmons; wide band gap semiconductors; InGaN-GaN; MOCVD; light emission; nanophotonics; nitride semiconductor nanostructures; orange LED; quantum well; solid-state lighting; surface plasmon coupling; white LED; Electroluminescence; Gallium nitride; Light emitting diodes; MOCVD; Ohmic contacts; Optical coupling; Plasmons; Semiconductor nanostructures; Solid state lighting; Surface morphology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-1591-5
Type :
conf
DOI :
10.1109/INOW.2007.4302882
Filename :
4302882
Link To Document :
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