• DocumentCode
    33979
  • Title

    Estimating SEE Error Rates for Complex SoCs With ASERT

  • Author

    Cabanas-Holmen, Manuel ; Cannon, Ethan H. ; Amort, Tony ; Ballast, Jon ; Brees, Roger

  • Author_Institution
    Boeing Co. Seattle, Seattle, WA, USA
  • Volume
    62
  • Issue
    4
  • fYear
    2015
  • fDate
    Aug. 2015
  • Firstpage
    1568
  • Lastpage
    1576
  • Abstract
    This paper describes the ASIC Single Event Effects (SEE) Error Rate Tool (ASERT) methodology to estimate the error rates of complex System-on-Chip (SoC) devices. ASERT consists of a top-down analysis to divide the SoC into sensitive cell groups. The SEE error rate is estimated with a bottom-up calculation summing the contribution of all sensitive cell groups, including derating and utilization factors to account for the probability that a cell-level error has a SoC-level impact. The sensitive cell SEE rates are evaluated using test data from specially designed test structures. Standard rate estimation tools are augmented with novel rate estimation approaches for direct proton upsets and for spatial redundancy.
  • Keywords
    logic testing; radiation hardening (electronics); system-on-chip; ASERT; ASIC single event effects error rate tool; SEE error rates; SoC-level impact; all sensitive cell groups; cell-level error; complex SoC; derating factors; direct proton upsets; spatial redundancy; standard rate estimation tools; system-on-chip devices; utilization factors; Clocks; Error analysis; Logic gates; Protons; Random access memory; Single event upsets; System-on-chip; Radiation effects in ICs; radiation hardening by design; single event effects; single event mitigation; single event modeling; single event transients; single event upset;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2015.2455027
  • Filename
    7180411