DocumentCode
33979
Title
Estimating SEE Error Rates for Complex SoCs With ASERT
Author
Cabanas-Holmen, Manuel ; Cannon, Ethan H. ; Amort, Tony ; Ballast, Jon ; Brees, Roger
Author_Institution
Boeing Co. Seattle, Seattle, WA, USA
Volume
62
Issue
4
fYear
2015
fDate
Aug. 2015
Firstpage
1568
Lastpage
1576
Abstract
This paper describes the ASIC Single Event Effects (SEE) Error Rate Tool (ASERT) methodology to estimate the error rates of complex System-on-Chip (SoC) devices. ASERT consists of a top-down analysis to divide the SoC into sensitive cell groups. The SEE error rate is estimated with a bottom-up calculation summing the contribution of all sensitive cell groups, including derating and utilization factors to account for the probability that a cell-level error has a SoC-level impact. The sensitive cell SEE rates are evaluated using test data from specially designed test structures. Standard rate estimation tools are augmented with novel rate estimation approaches for direct proton upsets and for spatial redundancy.
Keywords
logic testing; radiation hardening (electronics); system-on-chip; ASERT; ASIC single event effects error rate tool; SEE error rates; SoC-level impact; all sensitive cell groups; cell-level error; complex SoC; derating factors; direct proton upsets; spatial redundancy; standard rate estimation tools; system-on-chip devices; utilization factors; Clocks; Error analysis; Logic gates; Protons; Random access memory; Single event upsets; System-on-chip; Radiation effects in ICs; radiation hardening by design; single event effects; single event mitigation; single event modeling; single event transients; single event upset;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2015.2455027
Filename
7180411
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